PART |
Description |
Maker |
2643022401 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
2643001501 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
2643020501 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
2661250402 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
2661000301 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
BLM6G22-30 BLM6G22-30G |
Product description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
|
NXP Semiconductors N.V.
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
CLY5 Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge 17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Simple Drive Requirement
|
Advanced Power Electronics Corp. Advanced Power Electron...
|